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diffusion length中文是什么意思

  • 擴(kuò)散長(zhǎng)度
  • 擴(kuò)散距離

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  • 例句與用法
  • The impact of the effective resist diffusion length to the exposure latitude and mef ( mask error factor ) for the 0 . 13 m photolithography and beyond is presented
    展示了在0 . 13 m及以下工藝中等效擴(kuò)散對(duì)能量裕度和掩模版誤差因子的影響的研究結(jié)果。
  • How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced
    摘要介紹了如何通過測(cè)量得出的等效擴(kuò)散長(zhǎng)度和光刻機(jī)的照明條件來對(duì)任何光刻工藝的線寬均勻性進(jìn)行評(píng)估。
  • Generally the minority carriers accumulated by the cell are generated either directly from the p - n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers
    通常的太陽(yáng)電池收集的少數(shù)載流子要么是產(chǎn)生于p - n結(jié),要么是少數(shù)載流子距離結(jié)的距離必須小于其擴(kuò)散長(zhǎng)度。
  • Based on the energy band characteristics of ordinary negative electron affinity emitter gaas , the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented , and the special negative electron affinity emitter gaas was designed
    摘要根據(jù)通常負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵的能級(jí)特點(diǎn),提出延長(zhǎng)負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵的逸出深度的理論設(shè)計(jì),設(shè)計(jì)出了特殊的負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵。
  • The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy . on the basis of the new concept suggested in this paper , the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following . the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
    本文根據(jù)柱狀結(jié)構(gòu)存在各向異性的特點(diǎn),并根據(jù)半導(dǎo)體物理知識(shí),推出光導(dǎo)層光生載流子橫向最大擴(kuò)散長(zhǎng)度(該擴(kuò)散長(zhǎng)度與液晶光閥光導(dǎo)層分辨率直接相關(guān))與薄膜橫向和縱向電導(dǎo)率關(guān)系的表達(dá)式為:由于a - si : h在al金屬的誘導(dǎo)作用下在不高于250的溫度下即開始晶化,本文對(duì)用金屬al誘導(dǎo)非晶硅晶化制備的nc - si a - si : h薄膜進(jìn)行研究。
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